UK WESTCODE High Power Module

High Power Thyristors

High Power IGBTs

High Power Diodes

High Power Thyristors

Our high-power thyristors include phase control, medium voltage, gate turn-off and the most comprehensive offering of fast thyristors available.

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Part Number	Voltage [V]	Current [A]	MOQ	Offer
A0516YC200	2000	516	1	Request
A0516YC280	2800	516	1	Request
A1237NC200	2000	1237	1	Request
G1000NC450	4500	1000	1	Request
G1000QC250	2500	1000	1	Request
G1000QC25B	2500	1000	1	Request
G2500HF250	2500	2500	1	Request
G3000TF450	4500	3000	1	Request
G4000EF250	2500	4000	1	Request
H0700KC140	1400	700	1	Request

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High Power IGBTs

We offer the widest range of pressure contact IGBTs available. Our high-reliability products feature voltage ratings from 1.7kV to 6.5kV and current ratings from 115A to 3kA.

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Part Number	Voltage [V]	Current [A]	MOQ	Offer
T0140QC33G	3300	280	1	Request
T0160NB45A	4500	160	1	Request
T0240NB45E	4500	480	1	Request
T0258HF65G	6500	516	1	Request
T0285NC33E	3300	570	1	Request
T0340VB45G	4500	680	1	Request
T0360NB25A	2500	360	1	Request
T0385HF65E	6500	770	1	Request
T0425VC33G	3300	850	1	Request
T0500NB25E	2500	500	1	Request

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High Power Diodes

Our high-power diodes offer best-in-class performance and reliability. Rectifier devices are available with blocking voltages from 200V to 7.2kV and current ratings to >10kA.

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Part Number	Voltage [V]	Current [A]	MOQ	Offer
E0170YH45C	4500	208	1	Request
E0280YH20C	2000	391	1	Request
E0460QC40C	4000	528	1	Request
E0460QC45C	4500	528	1	Request
E0660NC40C	4000	783	1	Request
E0660NC45C	4500	783	1	Request
E0660NC45E	4500	760	1	Request
E0660NH40C	4500	783	1	Request
E0660NH45E	4500	760	1	Request
E0800QC20C	2000	1015	1	Request

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Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

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File Name	File Size (MB)	MOQ	Support
0440005.WRA.pdf	0.25	1	Request
A0516YC280.pdf	0.13	1	Request
AP45401.pdf	0.02	1	Request
AW218301N.pdf	0.02	1	Request
AW28302.pdf	0.02	1	Request
AW818301N.pdf	0.02	1	Request
C0044BG400SBJ.pdf	0.07	1	Request
C0044BG400SBS.pdf	0.07	1	Request
C0044BG400SCG.pdf	0.13	1	Request
CLA15E1200NPB.pdf	0.15	1	Request

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Part Numbering

Stud Devices

W	0508	S	A	04	0
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Device type W: Rectifier diode M: Fast/Soft recovery diode N: Phase control thyristor P: Fast turn-off thyristor S: Symmetrical Gate turn-off thyristor	Device nominal current rating	Device polarity S: Stud Anode R: Stud Cathode	Package A: 3/4" stud glass/metal C: 3/4" stud ceramic E: 3/4" HV ceramic stud with lug F: 3/4" HV ceramic stud H: 1/2" ceramic stud J: 1/2" ceramic stud with flag L: M12 stud ceramic with lug M: 3/8" stud ceramic R: M20 stud ceramic with lug & gate leads	Voltage grade - V_RRM, V_DRM/100	t_q code - See table for relevant code

Capsule Devices

W	0646	W	C	15	0
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Device type W: Rectifier diode M: Fast/soft recovery diode F: Extra fast diode E: HP Sonic-FRDTM N: Phase control thyristor R: Distributed gate thyristor P: Fast turn-off thyristor K: Medium voltage thyristor A: Asymmetric thyristor S: Symmetrical gate turn-off thyristor H: Fast symmetrical gate turn-off thyristor G: Asymmetric gate turn-off thyristor Y: Pulse Thyristor	Device nominal current rating For devices exceeding 9999 Amperes, digit 5 of the part number changes to C (x100)	Electrode diameter W: 19mm Y: 25mm K: 29mm J: 32mm L: 34mm Q: 38mm D: 44mm N: 47mm M: 50mm V: 63mm H: 66mm/68mm Z: 73mm T: 75mm E: 85mm F: 99mm G: 125mm	Housing type (electrode diameter in brackets) A: 26mm reverse build B: 8mm (D) C: Standard outline - 14mm (W, Y), 16mm (K), 26mm (L, Q, M, T, E, H), 26.5mm (N), 33mm (V), 36mm (F, G), 37mm (Z) D: 21mm (N), 24mm (V, Z), 26mm (F, G) E: 35mm inverse build (T, M, Q, E) F: 19.5mm (L), 26mm (K, N, V), 35mm (Z), 35mm (6.5kV Sonic Diodes) G: 35mm (L, N) H: 14mm (N), 26mm (Y) J: 19.5mm (N), 25.8mm (V), 26mm (T) K: Wespack 14.5mm (J, Q, M, H, N) L: Wespack 26mm (Q, M, H) M: Wespack 33mm (H) N: 14mm (W, Y), 26mm (L) R: Wespack 14mm (Q), 26mm (N)	Voltage grade - V_RRM, V_DRM/100	Special code 0: t_q code (thyristors), V_RRM % of V_DRM for Gate turn-off thyristors - See relevant tables P: PIN diode (Product groups: W, M, F, E) A: Avalanche rated diode (W)

Press-Pack IGBT Capsule Devices

T	0240	N	B	45	E
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Device type T: Press-pack IGBT	Device nominal current rating	Electrode diameter N: 47mm Q: 38mm V: 63mm H: 66mm T: 75mm E: 85mm A: 96mm D: 110mm G: 125mm B: 132mm	Die series C D F		45Voltage grade - V_RRM/100	Build description for multiple square die A: Reverse conducting E: Asymmetric G: Reverse conducting (IGBT to diode ratio of 2:1)